Infineon IGBT Silicon Modules FF200R12KS4

1.Product: IGBT Silicon Modules
2.Configuration: Dual
3.Collector- Emitter Voltage VCEO Max: 1200 V
4.Collector-Emitter Saturation Voltage: 3.2 V

$128.00

Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:	No
Brand:	Infineon Technologies
Product:	IGBT Silicon Modules
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	3.2 V
Continuous Collector Current at 25 C:	275 A
Gate-Emitter Leakage Current:	400 nA
Maximum Operating Temperature:	+ 125 C
Package / Case:	62 mm
Maximum Gate Emitter Voltage:	+/- 20 V
Minimum Operating Temperature:	– 40 C
Mounting Style:	Screw
Pd – Power Dissipation:	1.4 kW
Factory Pack Quantity:	500