Electronic Module, IGBT
Infineon IGBT Silicon Modules FF200R12KS4
1.Product: IGBT Silicon Modules
2.Configuration: Dual
3.Collector- Emitter Voltage VCEO Max: 1200 V
4.Collector-Emitter Saturation Voltage: 3.2 V
$128.00
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| RoHS: | No |
| Brand: | Infineon Technologies |
| Product: | IGBT Silicon Modules |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Continuous Collector Current at 25 C: | 275 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Maximum Operating Temperature: | + 125 C |
| Package / Case: | 62 mm |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Minimum Operating Temperature: | – 40 C |
| Mounting Style: | Screw |
| Pd – Power Dissipation: | 1.4 kW |
| Factory Pack Quantity: | 500 |
| Weight | 0.34 kg |
|---|---|
| brands |
Based on 0 reviews
Be the first to review “Infineon IGBT Silicon Modules FF200R12KS4”
You must be logged in to post a review.
There are no reviews yet.