Electronic Module, IGBT
FUJI 1MBI2400U4D-120 IGBT Transistor Module
1.1MBI2400U4D-120
2.IGBT MODULE (U series)
3.1200v /2400A /1 in one package
$642.00
| Feature | 1） | Square RBSOA |
| 2） | Low Saturation Voltage | |
| 3） | Overcurrent Limiting Function (~3 Times Rated Current) | |
| 4） | IGBT is three-terminal power semiconductor device | |
| 5） | High Frequency Operation | |
| Application | 1） | AC Drive inverter |
| 2） | Servo control | |
| 3） | UPS, Uninterruptible Power Supply | |
| 4） | Welding Power Supplies | |
| Description | 1） | IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form |
| 2） | IGBT combines the best attributes of both to achieve optimal device characteristics. | |
| Each module consists of two IGBTs in a half-bridge configuration with each | ||
| transistor having a reverse-connected super-fast recovery free-wheel diode. | ||
| 3） | All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly. |
| Weight | 0.8 kg |
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