Model | MG200J2YS50 |
Brand | Toshiba |
Place of Original | Japan |
Type | IGBT Power Module MG200J2YS50 |
Collector-Emitter Voltage | 600V |
Collector Power Dissipation | 900W |
Forward Current | 200A |
Collector Current | 200A |
Junction Temperature | 150°C |
Electronic Module, IGBT
MG200J2YS50 Toshiba IGBT Power Transistor Module
1.Condition : Used parts 90% new
2.Lead time : 1-2days
3.warranty :60 days
Used parts 90% new
$36.90
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