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MG200J2YS50 Toshiba IGBT Power Transistor Module

TOSHIBA
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1.Condition : Used parts 90% new
2.Lead time : 1-2days
3.warranty :60 days
Used parts 90% new

$36.90

Model MG200J2YS50
Brand Toshiba
Place of Original  Japan
Type IGBT Power Module MG200J2YS50
Collector-Emitter Voltage  600V 
Collector Power Dissipation 900W
Forward Current  200A
Collector Current  200A 
Junction Temperature  150°C
SKU: MG200J2YS50 (Donna) Categories: , Tag:

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