| Model | MG200J2YS50 |
| Brand | Toshiba |
| Place of Original | Japan |
| Type | IGBT Power Module MG200J2YS50 |
| Collector-Emitter Voltage | 600V |
| Collector Power Dissipation | 900W |
| Forward Current | 200A |
| Collector Current | 200A |
| Junction Temperature | 150°C |
Electronic Module, IGBT
MG200J2YS50 Toshiba IGBT Power Transistor Module
1.Condition : Used parts 90% new
2.Lead time : 1-2days
3.warranty :60 days
Used parts 90% new
$36.90
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